Wide Bandgap Device Group
Center for Power Electronics Systems
Electrical and Computer Engineering Department
Virginia Polytechnic Institute and State University
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7.     Y. Zhang, “High Electron Mobility Transistors with Charge Compensation”, US 16/881,846 (Pending)

6.     Y. Zhang, K. Sasaki, “Gallium Oxide Vertical Schottky Barrier Diode”, Provisional, Aug. 2019, VTIP 20-015

5.     Y. Zhang, T. Palacios, “Vertical Nitride Semiconductor Device”, US 14/662837 (Pending)

4.     Y. Zhang, K. Teo, "Semiconductor Device With Multiple Carrier Channels", US 9876102, Jan. 2018

3.     Y. Zhang, T. Palacios, “Enhancement-mode Transistors with Increased Threshold Voltage”, US 9704959, Jul. 2017.

2.     Y. Zhang, K. Teo, "Semiconductor Device With Multiple-Functional Barrier Layer", US 9583607, Feb. 2017

1.     Y. Zhang, K. Teo, "Semiconductor Device With Multiple Carrier Channels", US 9419121, Aug. 2016