Wide Bandgap Electronics Group
Center for Power Electronics Systems
Electrical and Computer Engineering Department
Virginia Polytechnic Institute and State University
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The publications are updated on Google Scholar

We mainly published in the communities of Electron Devices and Power Electornics. Here is a sketch of  the stastistics of our major publications in which we are the lead/co-lead authors. Update on 2023/11.

1. Electron Devices: IEDM (10), ISPSD (6), IRPS (7), IEEE Electron Device Lett. (18), Appl. Phys. Lett. (10), IEEE Trans. Electron Devices (10)

2. Power Electronics: IEEE Tarns. Power Electronics (12), IEEE Journal of Emerging and Selected Topics in Power Electronics (3), APEC (14), ECCE (2)

3. Broad Fields: Nature Electronics (1), Nature Communications (1), Advanced Materials (1)

Selected recent publications:

1.    Y. Qin, M. Porter, M. Xiao, Z. Du, H. Zhang, Y. Ma, J. Spencer, B. Wang, Q. Song, K. Sasaki, C-H. Lin, I. Kravchenko, D. P. Briggs, D. K. Hensley, M. Tadjer, H. Wang, and Y. Zhang*, “2 kV, 0.7 mΩ∙cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness,” in 2023 International Electron Devices Meeting (IEDM), Dec. 2023, pp. 26.5.

2.  F. Zhou, H. Gong, M. Xiao, Y. Ma, Z. Wang, X. Yu, L. Li, L. Fu, H. H. Tan, Y. Yang, F-F. Ren, S. Gu, Y. Zheng, H. Lu*, R. Zhang*, Y. Zhang*, and J. Ye*, “An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics,” Nature Communications, vol. 14, pp. 4459, Jul. 2023. 

3. Q. Song, R. Zhang, Q. Li, and Y. Zhang*, “Origin of Soft-Switching Output Capacitance Loss in Cascode GaN HEMTs at High Frequencies,” IEEE Transactions on Power Electronics, vol. 38, no. 11, pp. 13561-13566, Nov. 2023. (Issue Highlight)

4.   M. Xiao, Y. Wang, R. Zhang, Q. Song, M. Porter, E. Carlson, K. Cheng, K. Ngo, and Y. Zhang*, “Robust Avalanche in 1.7 kV Vertical GaN Diodes with a Single-Implant Bevel Edge Termination,” IEEE Electron Device Letters, vol. 44, no. 10, pp. 1616-1619, Oct. 2023. (Editor’s Pick and Issue Cover)

5.   Y. Qin, M. Xiao, M. Porter, Y. Ma, J. Spencer, Z. Du, A. G. Jacobs, K. Sasaki, H. Wang, M. Tadjer, and Y. Zhang*, “10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C,”IEEE Electron Device Letters, vol. 44, no. 9, pp. 1268-1271, Aug. 2023. (covered by Semiconductor Today) 

 6. M. Xiao, B. Wang, J. Spencer, Y. Qin, M. Porter, Y. Ma, Y. Wang, K. Sasaki, M. Tadjer, and Y. Zhang*, “NiO junction termination extension for high-voltage (>3 kV) Ga2O3 devices,” Applied Physics Letters, vol. 122, no. 18, pp. 183501, May 2023. (selected as Feature Article of the issue)

 7.   J. Kozak, Q. Song, R. Zhang, Y. Ma, J. Liu, Q. Li, W. Saito, and Y. Zhang*, “Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching near Breakdown Voltage,” IEEE Transactions on Power Electronics, vol. 38, no. 1, pp. 435-446, Jan. 2023.

  8.   Y. Zhang*, F. Udrea*, and H. Wang*, “Multidimensional device architectures for efficient power electronics,” Nature Electronics, vol. 5, no. 11, Art. no. 11, Nov. 2022. (covered by 40+ media globally, including Semiconductor Today, Compound Semiconductor Magazine, VT News, etc.)

9.    M. Xiao, Y. Ma, Z. Du, Y. Qin, K. Liu, K. Cheng, F. Udrea, A. Xie, E. Beam, B. Wang, J. Spencer, M. Tadjer, T. Anderson, H. Wang, and Y. Zhang*, “First Demonstration of Vertical Superjunction Diode in GaN,” in 2022 International Electron Devices Meeting (IEDM), Dec. 2022, pp. 35.6. (covered by Compound Semiconductor Magazine) 

10.    R. Zhang, J. Liu, Q. Li, S. Pidaparthi, A. Edwards, C. Drowley, and Y. Zhang*, “Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET,” IEEE Transactions on Power Electronics, vol. 37, no. 6, pp. 6253-6258, Jun. 2022.

11. M. Xiao, Y. Ma, Z. Du, V. Pathirana, K. Cheng, A. Xie, E. Beam, Y. Cao, F. Udrea, H. Wang, and Y. Zhang*, “Multi-Channel Monolithic-Cascode HEMT (MC2-HEMT): A New GaN Power Switch up to 10 kV,” 2021 67th IEEE International Electron Devices Meeting (IEDM), pp. 5.5.1-5.5.4, Dec. 2021. (selected as the IEDM Technical Highlight, featured in editorial research highlight by Nature Electronics)

12. M. Xiao, Y. Ma, K. Liu, K. Cheng, and Y. Zhang*, “10 kV, 39 mΩ∙cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes,” IEEE Electron Device Letters, vol. 42, no. 6, pp. 808-811, Jun. 2021. (covered by Semiconductor Today)

13.     B. Wang, M. Xiao, J. Knoll, C. Buttay, K. Sasaki, G. Q. Lu, C. DiMarino, and Y. Zhang*, “Low Thermal Resistance (0.5 K/W) Ga2O3 Schottky Rectifiers with Double-Side Packaging,” IEEE Electron Device Letters, vol. 42, no. 8, pp. 1132-1135, Aug. 2021. ( Editor’s Pick)

14.     M. Xiao, B. Wang, J. Liu, R. Zhang, Z. Zhang, C. Ding, S. Lu, K. Sasaki, G-Q. Lu, C. Buttay, and Y. Zhang*, “Packaged Ga2O3 Schottky Rectifiers with Over 60 A Surge Current Capability,” IEEE Transactions on Power Electronics, vol. 36, no. 8, pp. 8565-8569, Aug. 2021.

15. M. Xiao, Y. Ma, Z. Du, X. Yan, R. Zhang, K. Cheng, K. Liu, A. Xie, E. Beam, Y. Cao, H. Wang, and Y. Zhang*, “5 kV Multi-Channel AlGaN/GaN Power Schottky Barrier Diodes with Junction-Fin-Anode”, 2020 66th IEEE International Electron Devices Meeting (IEDM), pp. 5.4.1-5.4.4, Dec. 2020. (selected as the IEDM Technical Highlight, featured in editorial research highlight by Nature Electronics, reported by Compound Semiconductor Magazine)

16.     J. Liu, M. Xiao, Y. Zhang*, S. Pidaparthi, H. Cui, A. Edwards, L. Baubutr, W. Meier, C. Coles and C. Drowley*, “1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities”, 2020 66th IEEE International Electron Devices Meeting (IEDM), pp. 23.2.1-23.2.4, Dec. 2020.

17.     R. Zhang, J. Kozak, Q. Song, M. Xiao, J. Liu, and Y. Zhang*, “Dynamic Breakdown Voltage of GaN Power HEMTs”, 2020 66th IEEE International Electron Devices Meeting (IEDM), pp. 23.3.1-23.3.4, Dec. 2020.

18. R. Zhang, J. P. Kozak, M. Xiao, J. Liu and Y. Zhang*, “Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs”, IEEE Transactions on Power Electronics, vol. 35, no. 12, pp. 13409-13419, Dec. 2020.  

 19.     B. Wang, M. Xiao, X. Yan, H. Y. Wong, J. Ma, K. Sasaki, H. Wang, and Y. Zhang*, “High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K”, Applied Physics Letters, vol. 115, no. 26, pp. 263503, Dec. 2019. (Editor’s Pick)

 20.     N. Allen, M. Xiao, X. Yan, K. Sasaki, M. J. Tadjer, J. Ma, R. Zhang, H. Wang, and Y. Zhang*, “Vertical Ga2O3 Schottky Barrier Diodes with Small-Angle Beveled Field Plates: a Baliga’s Figure-of-Merit of 0.6 GW/cm2”, IEEE Electron Device Letters, vol. 40, no. 9, pp. 1399-1402, Sept. 2019. (covered by Semiconductor Today)