Wide Bandgap Electronics Group
Center for Power Electronics Systems
Electrical and Computer Engineering Department
Virginia Polytechnic Institute and State University
 Home & Research     Team     Publications     Patents     Conference Presentations     Media Coverage    Facilities     Teaching      Contact Us

Latest publications are updated on Google Scholar

[J62]   K. H. Teo, Y. Zhang, N. Chowdhury, S. Rakheja, R. Ma, Q. Xie, E. Yagyu, K. Yamanaka, K. Li, and T. Palacios, “Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects,” Journal of Applied Physics, vol. 130, no. 16, pp. 160902, Nov. 2021.

[J61]   Q. Song, R. Zhang, J. P. Kozak, J. Liu, Q. Li, and Y. Zhang, “Robustness of Cascode GaN HEMTs in Unclamped Inductive Switching,” IEEE Transactions on Electron Devices, vol. 68, no. 10, pp. 4854-4861, Oct. 2021.

[C35].   Y. Zhang, B. Wang, M. Xiao, J. Spencer, R. Zhang, J. Knoll, C. DiMarino, G.-Q. Lu, K. Sasaki, and C. Buttay, “(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga2O3 Devices?”, 240th ECS Meeting, Oct. 2021.

[C34].    Y. Zhang, M. Xiao, Y. Ma, Z. Du, H. Wang, A. Xie, E. Beam, Y. Cao, and K. Cheng, “(Invited) Multi-Channel AlGaN/GaN Power Rectifiers: Breakthrough Performance up to 10 kV,” 240th ECS Meeting, Oct. 2021. 

[J60]   Y. Ma*, M. Xiao*, Z. Du, H. Wang, and Y. Zhang, “Tri-Gate Junction HEMTs: Physics and Performance Space,” IEEE Transactions on Electron Devices, vol. 68, no. 10, pp. 4854-4861, Oct. 2021. 

[J59]   B. Wang*, M. Xiao*, J. Knoll, C. Buttay, K. Sasaki, G. Q. Lu, C. DiMarino, and Y. Zhang, “Low Thermal Resistance (0.5 K/W) Ga2O3 Schottky Rectifiers with Double-Side Packaging,” IEEE Electron Device Letters, vol. 42, no. 8, pp. 1132-1135, Aug. 2021. (Editor’s Pick)

[J58].     M. Xiao, Y. Ma, K. Liu, K. Cheng, and Y. Zhang, “10 kV, 39 mOhm cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes”, IEEE Electron Device Letters, vo. 42, no. 6, pp. 808-811, Jun. 2021.

[C33].    Q. Song, R. Zhang, J. P. Kozak, J. Liu, Q. Li, and Y. Zhang, “Robustness of Cascode GaN HEMTs under Repetitive Overvoltage and Surge Energy Stresses”, 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 363-369, May. 2021. (Best Presentation Award) 

[C32].     Y. Ma, M. Xiao, Z. Du, X. Yan, H. Wang, K. Cheng, M. Clavel, M. K. Hudait, L. Tao, F. Lin, I. Kravchenko, and Y. Zhang, “Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability,” 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), May. 2021. 

[J57].     H. Dhillon, K. Mehta, M. Xiao, B. Wang, Y. Zhang, and H. Y. Wong, “TCAD-Augmented Machine Learning with and without Domain Expertise”, IEEE Transaction on Electron Devices, vol. 88, no. 11, pp. 5498-5503, Nov. 2021.

[C31].     J. P. Kozak, Q. Song, R. Zhang, J. Liu, and Y. Zhang, “Robustness of GaN Gate Injection Transistors under Repetitive Surge Energy and Overvoltage”, 2021 IEEE International Reliability Physics Symposium (IRPS), Mar. 2020.

[C30].     Q. Song, R. Zhang, J. P. Kozak, J. Liu, Q. Li, and Y. Zhang, “Failure Mechanisms of Cascode GaN HEMTs Under Overvoltage and Surge Energy Events”, 2021 IEEE International Reliability Physics Symposium (IRPS), Mar. 2020.

[J56].     J. Liu, R. Zhang, M. Xiao. S. Pidaparthi, H. Cui, A. Edwards, L. Baubutr, C. Drowley, and Y. Zhang, “Surge Current and Avalanche Ruggedness of 1.2 kV Vertical GaN p-n Diodes”, IEEE Transactions on Power Electronics, vol. 36, no. 10, pp. 10959-10964, Oct. 2021.

[J55].     J. P. Kozak, R. Zhang, J. Liu, K. D. T. Ngo, and Y. Zhang, “Degradation of SiC MOSFETs under High-Bias Switching Events”, IEEE Journal of Emerging and Selected Topics in Power Electronics, early access online, Mar. 2021.

[J54].     J. Liu, M. Xiao, R. Zhang. S. Pidaparthi, H. Cui, A. Edwards, M. Craven, L. Baubutr, C. Drowley, and Y. Zhang, “1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capbility”, IEEE Transaction on Electron Devices, vol. 68, no. 4, pp. 2025-2032, Apr. 2021.

[J53].     J. P. Kozak, R. Zhang, Q. Song, J. Liu, W. Saito, and Y. Zhang, “True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching”, IEEE Electron Device Letters, vol. 42, no. 4, pp. 505-508, Apr. 2021.

[J52].     Y. Zhang, A. Zubair, Z. Liu, M. Xiao, J. A. Perozek, Y. Ma, and T. Palacios, “GaN FinFETs and trigate devices for power and RF applications: review and perspective”, Semiconductor Science and Technology, vol. 36, no. 5, pp. 054001,  Mar. 2021.

[J51].     M. Xiao, B. Wang, J. Liu, R. Zhang, Z. Zhang, C. Ding, S. Lu, K. Sasaki, G-Q. Lu, C. Buttay, and Y. Zhang, “Packaged Ga2O3 Schottky Rectifiers with Over 60 A Surge Current Capability”, IEEE Transactions on Power Electronics, vol. 36, no. 8, pp. 8565-8569, Aug. 2021.

[J50].     X. Lin, L. Ravi, Y. Zhang, R. Burgos and D. Dong, “Analysis of Voltage Sharing of Series-Connected High Voltage SiC MOSFETs and Body-Diodes”, IEEE Transactions on Power Electronics, vol. 36, vol. 7, pp. 7612-7624, Jul. 2021.

[J49].     R. Zhang, X. Liu, J. Liu, S. Mocevic, D. Dong and Y. Zhang, “Third Quadrant Conduction Loss of 1.2–10 kV SiC MOSFETs: Impact of Gate Bias Control”, IEEE Transactions on Power Electronics, vol. 36, no. 2, pp. 2033-2043, Feb. 2021.

[J48].     R. Zhang*, J. P. Kozak*, M. Xiao, J. Liu and Y. Zhang, “Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs”, IEEE Transactions on Power Electronics, vol. 35, no. 12, pp. 13409-13419, Dec. 2020.  (*equal  contribution)

[C29].     M. Xiao, Y. Ma, Z. Du, X. Yan, R. Zhang, K. Cheng, K. Liu, A. Xie, E. Beam, Y. Cao, H. Wang and Y. Zhang, “5 kV Multi-Channel AlGaN/GaN Power Schottky Barrier Diodes with Junction-Fin-Anode”, 2020 66th IEEE International Electron Devices Meeting (IEDM), pp. 5.4.1-5.4.4, Dec. 2020. (selected as the IEDM conference highlight, hilghlighted by Nature Electronics)

[C28].     J. Liu, M. Xiao, Y. Zhang, S. Pidaparthi, H. Cui, A. Edwards, L. Baubutr, W. Meier, C. Coles and C. Drowley, “1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities”, 2020 66th IEEE International Electron Devices Meeting (IEDM), pp. 23.2.1-23.2.4, Dec. 2020.

[C27].     R. Zhang, J. Kozak, Q. Song, M. Xiao, J. Liu and Y. Zhang, “Dynamic Breakdown Voltage of GaN Power HEMTs”, 2020 66th IEEE International Electron Devices Meeting (IEDM), pp. 23.3.1-23.3.4, Dec. 2020.

[C26].     S. S. Raju, B. Wang, K. Mehta, M. Xiao, Y. Zhang and H. Y. Wong, “Application of Noise to Avoid Overfitting in TCAD Augmented Machine Learning”, 2020 Intenational Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 351-354, Nov. 2020.

[J47].     M. Xiao, X. Yan, Y. Cao, J. Xie, E. Beam, Y. Cao, H. Wang and Y. Zhang, “Origin of Leakage Current in Vertical GaN Devices with Nonplanar Regrown P-GaN”, Applied Physics Letters, vol. 117, no. 18, pp. 183502, Nov. 2020.

[J46].     C. Buttay, H. Y. Wong, B. Wang, M. Xiao, C. Dimarino and Y. Zhang, “Surge current capability of ultra-wide-bandgap Ga2O3 Schottky diodes”, Microelectronics Reliability, vol. 114, pp. 113743, Nov. 2020.

[J45].     (Invited Paper) Y. Zhang and T. Palacios, “(Ultra)Wide-Bandgap Vertical Power FinFETs”, IEEE Transactions on Electron Devices, vol. 67, no. 10, pp. 3960-3971, Oct. 2020.

[C25].     J. P. Kozak, R. Zhang, J. Liu, Q. Song, M. Xiao and Y. Zhang, “Hard-Switched Overvoltage Robustness of p-Gate GaN HEMTs at Increasing Temperatures”, 2020 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 677-682, Oct. 2020.

[C24].     F. Nowshin, Y. Zhang, L. Liu, and Y. Yi, "Recent Advances in Reservoir Computing with A Focus on Electronic Reservoirs", 2020 11th International Green and Sustainable Computing Workshops (IGSC), Oct. 2020.

[C23].     A. Elwailly, M. Xiao, Y. Zhang, and H. Y. Wong, "Design Space of Vertical Ga2O3 Junctionless FinFET and its Enhancement with Gradual Channel Doping", 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Sept. 2020.

[J44].     Y. Ma*, M. Xiao*, Z. Du. X. Yan, K. Cheng, M. Clavel, M. K. Hudait, I. Kravchenko, H. Wang and Y. Zhang, "Tri-gate GaN junction HEMT”, Applied Physics Letters, vol. 117, no. 14, pp. 143506, Oct. 2020. (*equal  contribution)

[J43].   (Invited Paper) R. Zhang, J. P. Kozak, J. Liu and Y. Zhang, “Ruggedness of SiC and GaN Power Transistors in Switching Based Tests”, ECS Transactions, vol. 98, no. 6, pp. 37-48, Sept. 2020.

[J42].   H. Y. Wong, M. Xiao, B. Wang, Y. K. Chiu, X. Yan, J. Ma, K. Sasaki, H. Wang and Y. Zhang, “TCAD-Machine Learning Framework for Device Variation and Operating Temperature Analysis with Experimental Demonstration”, IEEE Journal of the Electron Devices Society, vol. 8, pp. 992-1000, Sept. 2020.

[C22].   R. Zhang, X. Liu, J. Liu, S. Mocevic, D. Dong and Y. Zhang, “Third Quadrant Operation of 1.2 kV-10 kV SiC Planar MOSFETs: New Device Findings and Converter Validation”, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 246-249, Sept. 2020.

[C21].   K. H. Teo, N. Chowdhury, Y. Zhang, T. Palacios, K. Yamanaka, Y. Yamaguchi, “Recent Development in 2D and 3D GaN devices for RF and Power Electronics Applications”, 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), pp. 22-24, Sept. 2020.

[J41].   J. Liu, M. Xiao, R. Zhang, S. Pidaparthi, C. Drowley, L. Baubutr, A. Edwards, H. Cui, C. Coles and Y. Zhang, “Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes”, IEEE Electron Device Letters, vol. 41, no. 9, pp. 1328-1331, Sept. 2020.

[J40].   K. Mehta, S. S. Raju, M. Xiao, B. Wang, Y. Zhang and H. Y. Wong, “Improvement of TCAD Augmented Machine Learning using Autoencoder for Semiconductor Variation Identification and Inverse Design”, IEEE Access, vol. 8, pp. 143519-143529, Aug. 2020.

[J39].   M. Xiao, Y. Ma, K. Cheng, K. Liu, A. Xie, E. Beam, Y. Cao and Y. Zhang, “3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes with P-GaN Termination”, IEEE Electron Device Letters, vol. 41, no. 8, pp. 1177-1180, Aug. 2020.

[C20].   A. Zubair, J. Niroula, N. Chowdhury, Y. Zhang, J. Lemettinen and T. Palacios, “Materials and Technology Issues for the Next Generation of Power Electronic Devices”, 2020 Device Research Conference (DRC), Jun. 2020.

[C19].   J. P. Kozak, R. Zhang, J. Liu, K. D. T. Ngo and Y. Zhang, “Physics of Degradation in SiC MOSFETs Stressed by Overvoltage and Overcurrent Switching”, 2020 IEEE International Reliability Physics Symposium (IRPS), Jun. 2020.

[C18].   R. Zhang, J. P. Kozak, J. Liu, M. Xiao and Y. Zhang, “Surge Energy Robustness of GaN Gate Injection Transistors”, 2020 IEEE International Reliability Physics Symposium (IRPS), Jun. 2020.

[J38].   H. Wang, M. Xiao, K. Sheng, T. Palacios and Y. Zhang, “Switching Performance Analysis of Vertical GaN FinFETs: Impact of Inter-Fin Designs”, IEEE Journal of Emerging and Selected Topics in Power Electronics, early access online, Mar. 2020.

[C17].   X. Lin, L. Ravi, Y. Zhang, D. Dong and R. Burgos, “Analysis of Parasitic Capacitors’ Impact on Voltage Sharing of Series-Connected SiC MOSFETs and Body-Diodes”, 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 208-215, Mar. 2020.

[C16].   J. P. Kozak, R. Zhang, H. Yang, K. D. T. Ngo and Y. Zhang, “Robustness Evaluation and Degradation Mechanisms of SiC MOSFETs Overstressed by Switched Stimuli”, 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 1135-1140, Mar. 2020.

[J37].   M. Xiao, Z. Du, J. Xie, E. Beam, X. Yan, K. Cheng, H. Wang, Y. Cao and Y. Zhang, “Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN”, Applied Physics Letters, vol. 116, no. 5, pp. 053503, Feb. 2020.

[J36].   Y. Ma, M. Xiao, R. Zhang, H. Wang and Y. Zhang, “Superjunction Power Transistors With Interface Charges: A Case Study for GaN”, IEEE Journal of the Electron Devices Society, vol. 8, pp. 42-48, Dec. 2019.

[J35].   B. Wang, M. Xiao, X. Yan, H. Y. Wong, J. Ma, K. Sasaki, H. Wang and Y. Zhang, “High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K”, Applied Physics Letters, vol. 115, no. 26, pp. 263503, Dec. 2019. (Editor’s Pick)

[C15].   W. Xu, Y. Wang, T. You, X. Ou, G. Han, H. Hu, S. Zhang, F. Mu, T. Suga, Y. Zhang, Y. Hao and X. Wang, “First Demonstration of Waferscale Heterogeneous Integration of Ga2O3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process”, 2019 IEEE International Electron Devices Meeting (IEDM), pp. 12.5.1-12.5.4, Dec. 2019.  

[C14].   H. Wang, M. Xiao, K. Sheng, T. Palacios and Y. Zhang, “Switching Performance Evaluation of 1200 V Vertical GaN Power FinFETs”, 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), pp. 314-318, Oct. 2019.

[J34].   M. Xiao, Y. Ma, R. Zhang, H. Wang and Y. Zhang, “Design and Simulation of GaN Superjunction Power Transistors with 2DEG Channels and Fin Channels”, IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 7, no. 3, pp. 1475-1484, Sept. 2019.

[J33].   M. Xiao, T. Palacios and Y. Zhang, “On-Resistance in Vertical Power FinFETs”, IEEE Transactions on Electron Devices, vol. 66, no. 9, pp. 3903-3909, Sept. 2019.

[J32].   N. Allen, M. Xiao, X. Yan, K. Sasaki, M. J. Tadjer, J. Ma, R. Zhang, H. Wang and Y. Zhang, “Vertical Ga2O3 Schottky Barrier Diodes with Small-Angle Beveled Field Plates: a Baliga’s Figure-of-Merit of 0.6 GW/cm2”, IEEE Electron Device Letters, vol. 40, no. 9, pp. 1399-1402, Sept. 2019. (highlighted by Semiconductor Today online)

[J31].   N. Chowdhury, J. Lemettinen, Q. Xie, Y. Zhang, N. S. Rajput, P. Xiang, K. Cheng, S. Suihkonen, H. W. Then, T. Palacios, “p-Channel GaN Transistor based on p-GaN/AlGaN/GaN on Si”, IEEE Electron Device Letters, vol. 40, no. 7, pp. 1036-1039, Jul. 2019. 

[C13].   M. Xiao, R. Zhang, G. Schlenvogt, T. Jokinen, H. Wang and Y. Zhang, “Vertical GaN Superjunction FinFET: A Novel Device Enabling Multi-Kilovolt and Megahertz Power Switching”, 2019 Device Research Conference (DRC), pp. 161-162, Jun. 2019.

[J30].   Y. Lin, Q. Ma, P. C. Shen, B. llyas, Y. Bie, A. Liao, E. Ergecen, B. Han, N. Mao, X. Zhang, X. Ji, Y. Zhang, J. Yin, S. Huang, M. Dresselhaus, N. Gedik, P. J-Herrero, X. Ling, J. Kong and T. Palacios, “Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions”, Science Advances, vol. 5, no. 6, pp. eaav1493, Jun. 2019. 

[C12].   M. Xiao, W. Zhang, Y. Zhang, H. Zhou, K. Dang, J. Zhang and H. Yue, “Novel 2000 V Normally-off MOS-HEMTs using AlN/GaN Superlattice Channel”, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 471-473, May. 2019.

[J29].   M. Xiao, X. Gao, T. Palacios and Y. Zhang, “Leakage and Breakdown Mechanisms of GaN Vertical Power FinFETs”, Applied Physics Letters, vol. 114. No. 16, pp. 163503, Apr. 2019.

[J28].   X. Zhang, J. Grajal, J. Vazquez-Roy, U. Radhakrishna, X. Wang, W. Chern, L. Zhou, Y. Lin, P. Shen, X. Ji, X. Ling, A. Zubair, Y. Zhang, H. Wang, M. Dubey, J. Kong, M. Dresselhaus and T. Palacios, “Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting”, Nature, vol. 566, pp. 368-372, Jan. 2019.

[J27].   Y. Zhang, M. Sun, J. Perozek, Z. Liu, A. Zubair, D. Piedra, N. Chowdhury, K. Shepard, X. Gao, T. Palacios, “1.2 kV Large-area Vertical GaN Power FinFETs with Record Switching Figure-of-Merits”, IEEE Electron Device Letters, vol. 40, no. 1, pp. 75-78, Jan. 2019. (Editor’s Pick, highlighted by Semiconductor Today online, 2019 IEEE George Smith Award).

Before joining Virginia Tech

[J26].   (Invited paper) Y. Zhang, A. Dadgar, T. Palacios, “Vertical gallium nitride power devices on foreign substrates: a review and outlook”, Journal of Physics D: Applied Physics, vol. 51, no. 273001, Jun. 2018.

[C11].   X. Zhang, J. Grajal, X. Wang, U. Radhakrishna, Y. Zhang, J. Kong, M. S. Dresselhaus. T. Palacios, “MoS2 Phase-Junction-based Schottky Diodes for RF Electronics”, 2018 IEEE/MTT-S International Microwave Symposium, pp. 345-347, Jun. 2018.

[J26].   Y. Zhang, M. Yuan, N. Chowdhury, K. Cheng, T. Palacios, “720V/0.35mΩ cm2 Fully-Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers”, IEEE Electron Device Letters, vol. 39, no. 5, pp. 715-718, May 2018. (highlighted by Semiconductor Today online)

[J25].   (Invited paper) J. Hu*, Y. Zhang*, M. Sun, D. Piedra, N. Chowdhury, T. Palacios, “Materials and processing issues in vertical GaN power electronics”, Journal of Materials Science in Semiconductor Processing, vol. 78, pp. 75-84, May 2018. (*co-first author)

[J24].   H. Okumura, S. Suihkonen, J. Lemettinen, A. Uedono, Y. Zhang, D. Piedra, T. Palacios, “AlN metal–semiconductor field-effect transistors using Si-ion implantation”, Japanese Journal of Applied Physics, vol. 57, no. 4S, pp. 04FR11, Mar. 2018.

[J23].    (Invited paper) Y. Zhang, J. Hu, M. Sun, D. Piedra, N. Chowdhury, T. Palacios, “Vertical GaN Power Devices”, a chapter of “The 2018 GaN power electronics roadmap”, Journal of Physics D: Applied Physics, vol. 51, no. 16, Mar. 2018.

[C10].   Y. Zhang, M. Sun, D. Piedra, J. Hu, Z. Liu, Y. Lin, X. Gao, K. Shepard, T. Palacios “1200 V GaN Vertical Fin Power Field-Effect Transistors”, 2017 IEEE International Electron Devices Meeting (IEDM), pp. 9.2.1-9.2.4, Dec. 2017. [Over 30 media reports worldwide, e.g. MIT News Spotlight, EE News, Power Electronics, Semiconductor Today, Compound Semiconductor, ScienceDaily, TechSpot, Engadget, etc.]

[J22].   Y. Zhang, M. Sun, D. Piedra, J. Hennig, A. Dadgar, T. Palacios “Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes”, Applied Physics Letters, vol. 111, no. 16, pp. 163506, Oct. 2017.

[J21].   (Invited paper) Y. Zhang, M. Sun and T. Palacios, “GaN power devices: Perfecting the vertical architecture”, Feature Article in Compound Semiconductor Magazine, pp. 22-26, Oct. 2017.

[J20].   Y. Zhang, Z. Liu, M. J. Tadjer, M. Sun, D. Piedra, C. Hatem, T. J. Anderson, L. E. Luna, A. Nath, A. D. Koehler, H. Okumura, J. Hu, X. Zhang, X. Gao, B. N. Feigelson, K. D. Hobart, T. Palacios, “Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation”, IEEE Electron Device Letters, vol. 38, no. 8, pp. 1097-1100, Aug 2017. (highlight by Semiconductor Today and Compound Semiconductor Magazine online)

[J19].   Y. Zhang and T. Palacios, “Vertical Gallium Nitride Power Devices: Current Status and Prospects”, Power Electronics, vol. 51, no. 8, Aug. 2017.

[J18].   Y. Zhang, M. Sun, Z. Liu, D. Piedra, J. Hu, X. Gao, T. Palacios, “Trench formation and corner rounding in vertical GaN power devices”, Applied Physics Letters, vol. 110, no. 19, pp. 193506, May. 2017. (highlight by Semiconductor Today online)

[J17].   M. Sun, Y. Zhang, X. Gao, T. Palacios, “High Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates”, vol. 38, no. 4, pp. 509-512, IEEE Electron Device Letters, Apr. 2017. (highlight by Semiconductor Today online)

[J16].   Y. Zhang, D. Piedra, M. Sun, J. Hennig, A. Dadgar, L. Yu, T. Palacios, “High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes”, IEEE Electron Device Letters, vol. 38, no. 2, pp. 248-251, Feb. 2017. (highlight by Semiconductor Today online)

[C9].   Y. Zhang, M. Sun, Z. Liu, D. Piedra, M. Pan, X. Gao, Y. Lin, A. Zubair, L. Yu, T. Palacios, “Novel GaN Trench MIS Schottky Barrier Diodes with Field Rings”, 2016 IEEE International Electron Devices Meeting (IEDM), pp. 10.2.1-10.2.4, Dec. 2016. (highlight by Semiconductor Today and Compound Semiconductor Magazines)

[C8].   L. Yu, D. EI-Damak, U. Radhakrishna, A. Zubair, D. Piedra, X. Ling, Y. Lin, Y. Zhang, Y. H. Lee, D. Antoniadis, J. Kong, A. Chandrakasan, T. Palacios, “High-Yield Large Area MoS2 Technology: Material, Device and Circuits Co-Optimization”, 2016 IEEE International Electron Devices Meeting (IEDM 2016), pp. 5.7.1-5.7.4, Dec. 2016.

[J15].   L. Yu, D. EI-Damak, U. Radhakrishna, X. Ling, A. Zubair, Y. Lin, Y. Zhang, M. H. Chuang, Y. H. Lee, D. Antoniadis, J. Kong, A. Chandrakasan, T. Palacios, “Design, Modeling and Fabrication of CVD Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics”, Nano Letters, vol. 16, no. 10, Sept. 2016.

[C7].   Y. Zhang, K. H. Teo, T. Palacios “GaN HEMTs with multi-functional p-diamond back-barriers”, Proceedings of 2016 International Symposium on Power Semiconductor Devices and ICs (ISPSD 2016), pp. 107-110, Jun. 2016.

[J14].   Y. Zhang, K. H. Teo, T. Palacios, “Beyond Thermal Management: Incorporating p-Diamond Back-Barriers and Cap Layers into AlGaN/GaN HEMTs”, IEEE Transactions on Electron Device, vol. 63, no. 6, pp. 2340-2345, Apr. 2016.

[J13].   V. Moroz, H. Y. Wong, M. Choi, N. Braga, R. V. Mickevicius, Y. Zhang, T. Palacios, “The impact of defects in GaN device behavior: modeling dislocations, traps and pits”, ECS Journal of Solid State Science and Technology, vo. 5, no. 8, pp. 3142-3148, Jan. 2016.

[C6].   Y. Zhang, H. Y. Wong, M. Sun, S. Joglekar, L. Yu, N. Braga, R. V. Mickevicius, T. Palacios, “Design space and origin of leakage current in GaN vertical power diodes”, 2015 IEEE International Electron Devices Meeting (IEDM), pp. 35.1.1-35.1.4, Dec. 2015.

[C5].   L. Yu, D. EI-Damak, S. Ha, X. Ling, Y. Lin, A. Zubair, Y. Zhang, Y. H. Lee, J. Kong, A. Chandrakasan, T. Palacios, “Enhancement-Mode Single-layer CVD MoS2 FET Technology for Digital Electronics”, 2015 IEEE International Electron Devices Meeting (IEDM), pp. 32.3.1-32.3.4, Dec. 2015.

[C4].   D. Piedra, B. Lu, M. Sun, Y. Zhang, E. Matioli, F. Gao, J. W. Chung, O. Saadat, L. Xia, M. Azize, T. Palacios, “Advanced power electronic devices based on Gallium Nitride (GaN)”, 2015 IEEE International Electron Devices Meeting (IEDM), pp. 16.6.1-16.6.4, Dec. 2015.

[J12].   Y. Zhang, M. Sun, H. Y. Wong, Y. Lin, P. Srivastava, C. Hatem, M. Azize, D. Piedra, L. Yu. T. Sumitomo, N. Braga, R. V. Mickevicius, T. Palacios, “Origin and control of leakage in GaN-on-Si vertical diodes”, IEEE Transactions on Electron Device, vol. 62, no. 7, pp. 2155-2161, Jul. 2015. (highlight by Semiconductor Today)

[J11].   L. Yu, A. Zubair, E. Santos, X. Zhang, Y. Lin, Y. Zhang, T. Palacios, “High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits”, Nano Letters, vol. 15, no. 8, pp. 4928-4934, Jul. 2015. 

[C3].   X. Sun, Y. Zhang, K. S. Chang-Liao, T. Palacios, T. P. Ma, “Impacts of Fluorine-treatment on E-mode AlGaN/GaN MOS-HEMTs”, 2014 IEEE International Electron Devices Meeting (IEDM), pp. 17.3.1-17.3.4, Dec. 2014.

[J10].   A. Uedono, N. Yoshihara, Y. Zhang, M. Sun, D. Piedra, T. Fujishima, T. Palacios, “Vacancy clusters introduced by CF4-based plasma treatment in GaN probed with a monoenergetic positron beam”, Applied Physics Express, vol. 7, no. 12, pp. 120001, Dec. 2014.

[J9].   Y. Zhang, M. Sun, D. Piedra, M. Azize, X. Zhang, T. Fujishima, T. Palacios, “GaN-on-Si Vertical Shottky and p-n Diodes”, IEEE Electron Device Letters, vol. 35, no. 6, pp. 618-620, June. 2014. (Highlight by Semiconductor Today online)

[C2].   U. Radhakrishna, D. Piedra, Y. Zhang, T. Palacios, D. Antoniadis, “High Voltage GaN HEMTs Compact Model: Experimental   Verification, Field Plate Optimization and Charge Trapping”, 2013 IEEE International Electron Devices Meeting (IEDM 2013), pp. 32.7.1-32.7.4, Dec. 2013.

[J8].   T. Fujishima, S. Joglekar, D. Piedra, H.-S. Lee, Y. Zhang, A. Uedono, T. Palacios, “Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment”, Applied Physics Letters, vol. 103, no. 8, pp. 083508, Aug. 2013.

[J7].   Y. Zhang, M. Sun, S. J. Joglekar, T. Fujishima, T. Palacios, “Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors”, Applied Physics Letters, vol. 103, no. 3, pp. 033524, Jul. 2013. 

[J6].   Y. Zhang, M. Sun, Z. Liu, D. Piedra, H.-S. Lee, F. Gao, T. Fujishima, T. Palacios, “Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors”, IEEE Transactions on Electron Device, vol. 60, no. 7, pp. 2224-2230, Jun. 2013.

[C1].   Y. Zhang, M. Sun, S. J. Joglekar, T. Palacios, “High threshold voltage in GaN MOS-HEMTs modulated by fluorine plasma and gate oxide”, 71st Annual Device Research Conference (DRC 2013), pp. 141, Jun. 2013.

[J5].   F. F. Zhang, X. L. Yang, Y. H. Zhang, X. Z. Jiang, Z. Y. Lin, Z. T. Chen, D. Li, Y. B. Tao, C. D. Wang, G. Y. Zhang, “Influence of Si co-doping on magnetic, electrical and optical properties of Ga1–x MnxN film grown by MOCVD”, Science China: Technological Sciences, vol. 54, pp. 1703-1707, 2011.

[J4].   Y. H. Zhang, Z. Y. Lin, Z. T. Chen, D. Li, F. F. Zhang, C. D. Wang, G. Y. Zhang, Accurate characterization of room-temperature long range magnetic order in GaN:Mn by magnetic force microscope”, Science China: Technological Sciences, vol. 54, pp. 1-4, 2011.

[J3].   Y. Zhang, Z. Lin, Q. Dai, D. Li, Y. Wang, Y. Zhang, Y. Wang, Q. Feng, “Ultrathin MgB2 films fabricated on Al2O3 substrate by hybrid physical-chemical vapor deposition with high Tc and Jc”, Superconductor Science and Technology, vol. 24, pp. 015013, 2010 (Issue Highlight)

[J2].   Z. T. Chen, X. L. Yang, T. Dai, C. D. Wang, Z. C. Wen, B. S. Han, Y. H. Zhang, Z. Y. Lin, Y. Z. Qian, H. Zhang, G. Y. Zhang, “Direct observation of room-temperature ferromagnetism of single-phase Ga0.962Mn0.038N by magnetic force microscopy”, Journal of Applied Physics, no. 108, pp. 093913, 2010.

[J1].   X. L. Yang, Z. T. Chen, C. D. Wang, Y. Zhang, X. D. Pei, Z. J. Yang, G. Y. Zhang, Z. B. Ding, K. Wang, and S. D. Yao, “Structural, optical, and magnetic properties of Cu-implanted GaN films”, Journal of Applied Physics, vol. 105, pp. 053910, 2009.